KIOXIA and Sandisk have unveiled a new generation of Quad-Level Cell (QLC) 3D NAND flash memory that the companies say achieves more than 37 Gb/mm² of bit density, representing an increase of up to 60% over their eighth-generation technology. The companies say the 10th-generation QLC 3D flash memory is designed to address the increasing storage requirements of AI, cloud computing and other data-intensive workloads, while improving performance and power efficiency.
The technology uses a 332-layer architecture and an optimised floorplan to increase the amount of data that can be stored within the same physical area. According to KIOXIA and Sandisk, the resulting bit density exceeds 37 Gb/mm², which they describe as an industry benchmark for QLC NAND. A key change is the use of the companies’ CMOS directly Bonded to Array (CBA) architecture. The approach builds the CMOS logic and memory array on separate wafers before bonding them together, allowing the companies to scale the memory array while improving performance and manufacturing efficiency.
The new NAND also introduces a 4.8 Gb/s interface, making it the first QLC 3D flash memory technology from the companies to reach that interface speed. The interface combines Toggle DDR6.0 with the Separate Command Address (SCA) protocol to increase data transfer performance. Beyond raw bandwidth, the companies are focusing on reducing the power required to move data through the NAND interface. New interface technologies are designed to improve I/O data-out transfer efficiency, an increasingly important consideration as AI infrastructure drives higher storage activity and puts additional pressure on data centre power and cooling systems.
The technology incorporates Power-Isolated Low-Tapped Termination (PI-LTT), which is designed to improve I/O data-out transfer power efficiency. KIOXIA Europe CTO Axel Störmann said the growth of AI applications, including agentic and physical AI systems, is increasing demand for storage capacity and scalability. Sandisk CTO Alper Ilkbahar said the combination of higher density, bandwidth and energy efficiency is intended to provide a higher-capacity flash storage platform for AI training, inference and hyperscale data centre workloads.
The announcement comes as storage capacity and data movement become increasingly important considerations in AI infrastructure. Higher-density QLC NAND can potentially allow more data to be stored within a given physical footprint, while faster interfaces and improved transfer efficiency can help address the performance and energy requirements of large-scale systems.
The 10th-generation QLC 3D flash memory features a 332-layer architecture, with the companies reporting more than 37 Gb/mm² bit density and up to a 60% increase in density compared with their eighth-generation 3D NAND. It also supports a 4.8 Gb/s NAND interface using Toggle DDR6.0 and SCA, alongside the CBA architecture and PI-LTT technology for improved power efficiency.
